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The Effect of GeO2 and In2O3 Doping on the Dielectric Properties of CaCu3Ti4O12 Ceramics Prepared via Vibro-Milling Method

Identifieur interne : 002351 ( Main/Repository ); précédent : 002350; suivant : 002352

The Effect of GeO2 and In2O3 Doping on the Dielectric Properties of CaCu3Ti4O12 Ceramics Prepared via Vibro-Milling Method

Auteurs : RBID : Pascal:11-0391203

Descripteurs français

Pascal (Inist)
- Dopage, Propriété diélectrique, Broyeur vibrant, Addition germanium, Grosseur grain, Constante diélectrique, Perte diélectrique, Microstructure, Addition indium, Concentration impureté, Calcium Cuivre Titanate Mixte, Diélectrique permittivité élevée, Matériau diélectrique, CaCu3Ti4O12.
Wicri :
- concept : Dopage.

English descriptors

KwdEn :
- Calcium Copper Titanates Mixed, Dielectric losses, Dielectric materials, Dielectric properties, Doping, Germanium additions, Grain size, High k dielectric, Impurity density, Indium additions, Microstructure, Permittivity, Vibratory mill.

Abstract

In this work, effects of GeO₂ and In₂O₃ doping on the dielectric properties of CCTO were investigated. Doping levels range from 0.5 to 2.0 mol%. The vibro-milling method was employed for processing. The dopant addition produced a slightly smaller grain size. A reduction in dielectric constant was observed, but it is still high. The 2.0 mol% GeO₂ and In₂O₃ doped samples exhibited high dielectric constant of about 25,000 and 23,000 and low dielectric loss with 0.06 and 0.05 respectively at room temperature and at 10 kHz. The dielectric measurements showed that the modified samples exhibited a strong dielectric independency of temperature and frequency. In addition, the loss tangent reduced after doping. From this results, it can be incurred that GeO₂ and In₂O₃ doping, processed via vibro-mill are the suitable methods to achieve the stability of high ε_r and low loss ceramics.

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Pascal:11-0391203

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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">The Effect of GeO2 and In2O3 Doping on the Dielectric Properties of CaCu3Ti4O12 Ceramics Prepared via Vibro-Milling Method</title>
<author><name sortKey="Makcharoen, Worawut" uniqKey="Makcharoen W">Worawut Makcharoen</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Faculty of Science, Chiang Mai University</s1>
<s2>Chiang Mai 50200</s2>
<s3>THA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Thaïlande</country>
<wicri:noRegion>Chiang Mai 50200</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Tontrakoon, Jerapong" uniqKey="Tontrakoon J">Jerapong Tontrakoon</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Faculty of Science, Chiang Mai University</s1>
<s2>Chiang Mai 50200</s2>
<s3>THA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Thaïlande</country>
<wicri:noRegion>Chiang Mai 50200</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Rujijanagul, Gobwute" uniqKey="Rujijanagul G">Gobwute Rujijanagul</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Faculty of Science, Chiang Mai University</s1>
<s2>Chiang Mai 50200</s2>
<s3>THA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Thaïlande</country>
<wicri:noRegion>Chiang Mai 50200</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Materials Science Research Center, Chiang Mai University</s1>
<s3>THA</s3>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Thaïlande</country>
<wicri:noRegion>Materials Science Research Center, Chiang Mai University</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Cann, David P" uniqKey="Cann D">David P. Cann</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Faculty of Materials Science, Department of Mechanical Engineering, Oregon State Univeristy</s1>
<s2>Corvallis, Oregon</s2>
<s3>USA</s3>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Corvallis, Oregon</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Tunkasiri, Tawee" uniqKey="Tunkasiri T">Tawee Tunkasiri</name>
<affiliation wicri:level="1"><inist:fA14 i1="04"><s1>School of Science, Mae Fah Lung University</s1>
<s2>Chiang Rai 57100</s2>
<s3>THA</s3>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Thaïlande</country>
<wicri:noRegion>Chiang Rai 57100</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">11-0391203</idno>
<date when="2011">2011</date>
<idno type="stanalyst">PASCAL 11-0391203 INIST</idno>
<idno type="RBID">Pascal:11-0391203</idno>
<idno type="wicri:Area/Main/Corpus">002A48</idno>
<idno type="wicri:Area/Main/Repository">002351</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0015-0193</idno>
<title level="j" type="abbreviated">Ferroelectrics : (Print)</title>
<title level="j" type="main">Ferroelectrics : (Print)</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Calcium Copper Titanates Mixed</term>
<term>Dielectric losses</term>
<term>Dielectric materials</term>
<term>Dielectric properties</term>
<term>Doping</term>
<term>Germanium additions</term>
<term>Grain size</term>
<term>High k dielectric</term>
<term>Impurity density</term>
<term>Indium additions</term>
<term>Microstructure</term>
<term>Permittivity</term>
<term>Vibratory mill</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Dopage</term>
<term>Propriété diélectrique</term>
<term>Broyeur vibrant</term>
<term>Addition germanium</term>
<term>Grosseur grain</term>
<term>Constante diélectrique</term>
<term>Perte diélectrique</term>
<term>Microstructure</term>
<term>Addition indium</term>
<term>Concentration impureté</term>
<term>Calcium Cuivre Titanate Mixte</term>
<term>Diélectrique permittivité élevée</term>
<term>Matériau diélectrique</term>
<term>CaCu3Ti4O12</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Dopage</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">In this work, effects of GeO<sub>2</sub>
 and In<sub>2</sub>
O<sub>3</sub>
 doping on the dielectric properties of CCTO were investigated. Doping levels range from 0.5 to 2.0 mol%. The vibro-milling method was employed for processing. The dopant addition produced a slightly smaller grain size. A reduction in dielectric constant was observed, but it is still high. The 2.0 mol% GeO<sub>2</sub>
 and In<sub>2</sub>
O<sub>3</sub>
 doped samples exhibited high dielectric constant of about 25,000 and 23,000 and low dielectric loss with 0.06 and 0.05 respectively at room temperature and at 10 kHz. The dielectric measurements showed that the modified samples exhibited a strong dielectric independency of temperature and frequency. In addition, the loss tangent reduced after doping. From this results, it can be incurred that GeO<sub>2</sub>
 and In<sub>2</sub>
O<sub>3</sub>
 doping, processed via vibro-mill are the suitable methods to achieve the stability of high ε<sub>r</sub>
 and low loss ceramics.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0015-0193</s0>
</fA01>
<fA02 i1="01"><s0>FEROA8</s0>
</fA02>
<fA03 i2="1"><s0>Ferroelectrics : (Print)</s0>
</fA03>
<fA05><s2>415</s2>
</fA05>
<fA08 i1="01" i2="1" l="ENG"><s1>The Effect of GeO2 and In2O3 Doping on the Dielectric Properties of CaCu3Ti4O12 Ceramics Prepared via Vibro-Milling Method</s1>
</fA08>
<fA09 i1="01" i2="1" l="ENG"><s1>The Tenth Russian-Cis-Baltic-Japanese Symposium on Ferroelectricity (RCBJSF-10), Yokohama, Japan, June 20-24, 2010. Part II of III</s1>
</fA09>
<fA11 i1="01" i2="1"><s1>MAKCHAROEN (Worawut)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>TONTRAKOON (Jerapong)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>RUJIJANAGUL (Gobwute)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>CANN (David P.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>TUNKASIRI (Tawee)</s1>
</fA11>
<fA12 i1="01" i2="1"><s1>ITOH (M.)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="02" i2="1"><s1>AKISHIGE (Y.)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="03" i2="1"><s1>SIGOV (A. S.)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="04" i2="1"><s1>VAKHRUSHEV (S. B.)</s1>
<s9>ed.</s9>
</fA12>
<fA14 i1="01"><s1>Department of Physics, Faculty of Science, Chiang Mai University</s1>
<s2>Chiang Mai 50200</s2>
<s3>THA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Materials Science Research Center, Chiang Mai University</s1>
<s3>THA</s3>
<sZ>3 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Faculty of Materials Science, Department of Mechanical Engineering, Oregon State Univeristy</s1>
<s2>Corvallis, Oregon</s2>
<s3>USA</s3>
<sZ>4 aut.</sZ>
</fA14>
<fA14 i1="04"><s1>School of Science, Mae Fah Lung University</s1>
<s2>Chiang Rai 57100</s2>
<s3>THA</s3>
<sZ>5 aut.</sZ>
</fA14>
<fA15 i1="01"><s1>Tokyo Inst. Tech.</s1>
<s3>JPN</s3>
<sZ>1 aut.</sZ>
</fA15>
<fA15 i1="02"><s1>Shimane University</s1>
<s3>JPN</s3>
<sZ>2 aut.</sZ>
</fA15>
<fA15 i1="03"><s1>Moscow State Intitution of Radio-engineering, Electronics and Automation</s1>
<s3>RUS</s3>
<sZ>3 aut.</sZ>
</fA15>
<fA15 i1="04"><s1>Ioffe Physical Technical Inst.</s1>
<s3>RUS</s3>
<sZ>4 aut.</sZ>
</fA15>
<fA18 i1="01" i2="1"><s1>Materials and Structures Laboratory, Tokyo Institute of Technology</s1>
<s2>Yokohama</s2>
<s3>JPN</s3>
<s9>org-cong.</s9>
</fA18>
<fA18 i1="02" i2="1"><s1>Moscow State Intitution of Radio-engineering, Electronics and Automation</s1>
<s2>Moscow</s2>
<s3>RUS</s3>
<s9>org-cong.</s9>
</fA18>
<fA20><s1>113-121</s1>
</fA20>
<fA21><s1>2011</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>4466</s2>
<s5>354000508587610180</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2011 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>19 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>11-0391203</s0>
</fA47>
<fA60><s1>P</s1>
<s2>C</s2>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Ferroelectrics : (Print)</s0>
</fA64>
<fA66 i1="01"><s0>GBR</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>In this work, effects of GeO<sub>2</sub>
 and In<sub>2</sub>
O<sub>3</sub>
 doping on the dielectric properties of CCTO were investigated. Doping levels range from 0.5 to 2.0 mol%. The vibro-milling method was employed for processing. The dopant addition produced a slightly smaller grain size. A reduction in dielectric constant was observed, but it is still high. The 2.0 mol% GeO<sub>2</sub>
 and In<sub>2</sub>
O<sub>3</sub>
 doped samples exhibited high dielectric constant of about 25,000 and 23,000 and low dielectric loss with 0.06 and 0.05 respectively at room temperature and at 10 kHz. The dielectric measurements showed that the modified samples exhibited a strong dielectric independency of temperature and frequency. In addition, the loss tangent reduced after doping. From this results, it can be incurred that GeO<sub>2</sub>
 and In<sub>2</sub>
O<sub>3</sub>
 doping, processed via vibro-mill are the suitable methods to achieve the stability of high ε<sub>r</sub>
 and low loss ceramics.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B70G22C</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B70G22G</s0>
</fC02>
<fC03 i1="01" i2="X" l="FRE"><s0>Dopage</s0>
<s5>02</s5>
</fC03>
<fC03 i1="01" i2="X" l="ENG"><s0>Doping</s0>
<s5>02</s5>
</fC03>
<fC03 i1="01" i2="X" l="SPA"><s0>Doping</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Propriété diélectrique</s0>
<s5>03</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Dielectric properties</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Broyeur vibrant</s0>
<s5>04</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Vibratory mill</s0>
<s5>04</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Molino vibrante</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Addition germanium</s0>
<s5>05</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Germanium additions</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Grosseur grain</s0>
<s5>06</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Grain size</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Constante diélectrique</s0>
<s5>07</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Permittivity</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Perte diélectrique</s0>
<s5>08</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Dielectric losses</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Microstructure</s0>
<s5>09</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Microstructure</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Addition indium</s0>
<s5>10</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Indium additions</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Concentration impureté</s0>
<s5>11</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Impurity density</s0>
<s5>11</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Concentración impureza</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Calcium Cuivre Titanate Mixte</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>17</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Calcium Copper Titanates Mixed</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>17</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Mixto</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>17</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Diélectrique permittivité élevée</s0>
<s5>18</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>High k dielectric</s0>
<s5>18</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Dieléctrico alta constante dieléctrica</s0>
<s5>18</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Matériau diélectrique</s0>
<s5>19</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Dielectric materials</s0>
<s5>19</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>CaCu3Ti4O12</s0>
<s4>INC</s4>
<s5>54</s5>
</fC03>
<fN21><s1>269</s1>
</fN21>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>RCBJSF-10 Russian-cis-Baltic-Japanese Symposium on Ferroelectricity</s1>
<s3>Yokohama JPN</s3>
<s4>2010-06-20</s4>
</fA30>
</pR>
</standard>
</inist>
</record>

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The Effect of GeO2 and In2O3 Doping on the Dielectric Properties of CaCu3Ti4O12 Ceramics Prepared via Vibro-Milling Method

The Effect of GeO2 and In2O3 Doping on the Dielectric Properties of CaCu3Ti4O12 Ceramics Prepared via Vibro-Milling Method

Descripteurs français

English descriptors

Abstract

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Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

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